A floating-gate field-effect transistor memory device based on organic crystals with a built-in tunneling dielectric by a one-step growth strategy-Reference-Cited by-同舟云学术

A floating-gate field-effect transistor memory device based on organic crystals with a built-in tunneling dielectric by a one-step growth strategy

Published:2024 Issue:7 Volume:16 Page:3721-3728
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Chen Zichen¹,Chen Shuai¹,Jiang Tianhao¹,Chen Shuang¹,Jia Ruofei¹,Xiao Yanling¹,Pan Jing¹,Jie Jiansheng¹²^ORCID,Zhang Xiujuan¹^ORCID

Affiliation:

1. Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China

2. Macao Institute of Materials Science and Engineering, Macau University of Science and Technology, Taipa, Macau, SAR 999078, P. R. China

Abstract

A facile one-step liquid-surface drag coating method is developed to fabricate high-quality organic single-crystal semiconductor and tunneling dielectric layer in floating-gate organic transistors, which exhibit a multi-level data storage capability.

Funder

National Natural Science Foundation of China

Fundo para o Desenvolvimento das Ciências e da TecnologiaThe

Postdoctoral Research Foundation of China

Collaborative Innovation Center of Suzhou Nano Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NR/D3NR06278C

Reference36 articles.

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4. Complementary of Ferroelectric and Floating Gate Structure for High Performance Organic Nonvolatile Memory

5. Synthesis of Cyclopentadithiophene–Diketopyrrolopyrrole Donor–Acceptor Copolymers for High-Performance Nonvolatile Floating-Gate Memory Transistors with Long Retention Time

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