A floating-gate field-effect transistor memory device based on organic crystals with a built-in tunneling dielectric by a one-step growth strategy-Reference-Cited by-同舟云学术

A floating-gate field-effect transistor memory device based on organic crystals with a built-in tunneling dielectric by a one-step growth strategy

Published:2024 Issue: Volume: Page:
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Chen Zichen¹,Chen Shuai¹,Jiang Tianhao¹,Chen Shuang¹,Jia Ruofei¹,Xiao Yanling¹,Pan Jing¹,Jie Jiansheng¹²^ORCID,Zhang Xiujuan¹^ORCID

Affiliation:

1. Institute of Functional Nano & Soft Materials (FUNSOM), Jiangsu Key Laboratory for Carbon-Based Functional Materials & Devices, Soochow University, Suzhou, Jiangsu 215123, P. R. China

2. Macao Institute of Materials Science and Engineering, Macau University of Science and Technology, Taipa, Macau, SAR 999078, P. R. China

Abstract

A facile one-step liquid-surface drag coating method is developed to fabricate high-quality organic single-crystal semiconductor and tunneling dielectric layer in floating-gate organic transistors, which exhibit a multi-level data storage capability.

Funder

National Natural Science Foundation of China

Fundo para o Desenvolvimento das Ciências e da TecnologiaThe

Postdoctoral Research Foundation of China

Collaborative Innovation Center of Suzhou Nano Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2024/NR/D3NR06278C

Reference36 articles.

1. Metal-containing organic compounds for memory and data storage applications

2. Non-volatile organic memory with sub-millimetre bending radius

3. Nanostructured perovskites for nonvolatile memory devices

4. Complementary of Ferroelectric and Floating Gate Structure for High Performance Organic Nonvolatile Memory

5. Synthesis of Cyclopentadithiophene–Diketopyrrolopyrrole Donor–Acceptor Copolymers for High-Performance Nonvolatile Floating-Gate Memory Transistors with Long Retention Time