An electronic synapse memristor device with conductance linearity using quantized conduction for neuroinspired computing-Reference-Cited by-同舟云学术

An electronic synapse memristor device with conductance linearity using quantized conduction for neuroinspired computing

Published:2019 Issue:5 Volume:7 Page:1298-1306
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Zhao Jianhui¹²³,Zhou Zhenyu¹²³,Zhang Yuanyuan¹²³,Wang Jingjuan¹²³,Zhang Lei¹²³,Li Xiaoyan¹²³,Zhao Mengliu¹²³,Wang Hong¹²³,Pei Yifei¹²³,Zhao Qianlong¹²³,Xiao Zuoao¹²³,Wang Kaiyang¹²³,Qin Cuiya¹²³,Wang Gong¹²³,Li Hui¹²³,Ding Bangfu¹²³,Yan Faguang⁴⁵⁶,Wang Kaiyou⁴⁵⁶,Ren Deliang¹²³,Liu Baoting¹²³,Yan Xiaobing¹²³⁴⁵^ORCID

Affiliation:

1. National-Local Joint Engineering Laboratory of New Energy Photovoltaic Devices, Key Laboratory of Optoelectronic Information Materials of Hebei Province, Key Laboratory of Digital Medical Engineering of Hebei Province, College of Electron and Information Engineering, Hebei University

2. Baoding 071002

3. P. R. China

4. Institute of Semiconductors, Chinese Academy of Science

5. Beijing 100083

6. China

Abstract

An electrochemical metallization memristor based on Zr_0.5Hf_0.5O₂ film and an active Cu electrode with quantum conductance and neuromorphic behavior has been reported in this work.

Funder

National Natural Science Foundation of China

Hebei University

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/TC/C8TC04395G

Reference56 articles.

1. A Simple Device Unit Consisting of All NiO Storage and Switch Elements for Multilevel Terabit Nonvolatile Random Access Memory

2. Simple, Inexpensive, and Rapid Approach to Fabricate Cross-Shaped Memristors Using an Inorganic-Nanowire-Digital-Alignment Technique and a One-Step Reduction Process