A Simple Device Unit Consisting of All NiO Storage and Switch Elements for Multilevel Terabit Nonvolatile Random Access Memory-Reference-Cited by-同舟云学术

A Simple Device Unit Consisting of All NiO Storage and Switch Elements for Multilevel Terabit Nonvolatile Random Access Memory

Published:2011-10-25 Issue:11 Volume:3 Page:4475-4479
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Lee Myoung-Jae,Ahn Seung-Eon¹,Lee Chang Bum,Kim Chang-Jung,Jeon Sanghun,Chung U-In,Yoo In-Kyeong,Park Gyeong-Su,Han Seungwu²,Hwang In Rok³,Park Bae-Ho³

Affiliation:

1. School of Electrical Engineering, Korea University, Seoul 136-701, Korea

2. Department of Materials Science and Engineering, Seoul National University, Seoul 151-744, Korea

3. Division of Quantum Phases & Devices, Department of Physics, Konkuk University, Seoul 143-701, Korea

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/am201163n

Reference29 articles.

1. International Technology Roadmap for Semiconductors(ITRS), ITRS 2009, edition.

2. Electric-pulse-induced reversible resistance change effect in magnetoresistive films

3. Electrical Manipulation of Nanofilaments in Transition-Metal Oxides for Resistance-Based Memory

4. Resistance switching in the metal deficient-type oxides: NiO and CoO

5. Magnetic Domain-Wall Logic

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