Schottky-Barrier-Induced Asymmetry in the Negative-Differential-Resistance Response of Nb/NbOx / Pt Cross-Point Devices
Author:
Funder
Australian Research Council (ARC) Linkage Project
Publisher
American Physical Society (APS)
Subject
General Physics and Astronomy
Link
http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevApplied.13.064024/fulltext
Reference35 articles.
1. Threshold switching and electrical self-oscillation in niobium oxide films
2. Coupling dynamics of Nb/Nb2O5relaxation oscillators
3. Temperature dependent frequency tuning of NbOx relaxation oscillators
4. High-endurance megahertz electrical self-oscillation in Ti/NbOx bilayer structures
5. Physical origins of current and temperature controlled negative differential resistances in NbO2
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