Effect of Interdiffusion and Crystallization on Threshold Switching Characteristics of Nb/Nb<sub>2</sub>O<sub>5</sub>/Pt Memristors-Reference-Cited by-同舟云学术

Effect of Interdiffusion and Crystallization on Threshold Switching Characteristics of Nb/Nb₂O₅/Pt Memristors

Published:2023-12-05 Issue:50 Volume:15 Page:58613-58622
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Nandi Sanjoy Kumar¹^ORCID,Nath Shimul Kanti¹²^ORCID,Das Sujan Kumar¹^ORCID,Murdoch Billy J.³^ORCID,Ratcliff Thomas¹,McCulloch Dougal G.³^ORCID,Elliman Robert G.¹

Affiliation:

1. Research School of Physics, Australian National University, Canberra, Australian Capital Territory 2601, Australia

2. School of Photovoltaic and Renewable Energy Engineering, University of New South Wales (UNSW Sydney), Kensington, New South Wales 2052, Australia

3. School of Science, RMIT University, Melbourne, Victoria 3001, Australia

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.3c14431

Reference43 articles.

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2. Current Localization and Redistribution as the Basis of Discontinuous Current Controlled Negative Differential Resistance in NbO x

3. Understanding modes of negative differential resistance in amorphous and polycrystalline vanadium oxides

4. Coexistence of Memristance and Negative Differential Resistance in a Nanoscale Metal-Oxide-Metal System

5. Switching dynamics of TaOx-based threshold switching devices