Redistribution of native defects and photoconductivity in ZnO under pressure-Reference-Cited by-同舟云学术

Redistribution of native defects and photoconductivity in ZnO under pressure

Published:2019 Issue:8 Volume:9 Page:4303-4313
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Das Partha Pratim¹²³⁴^ORCID,Samanta Sudeshna⁵⁶⁷⁸⁹,Wang Lin⁵⁶⁷,Kim Jaeyong⁸⁹¹⁰⁴,Vogt Thomas¹¹¹²¹³¹⁴,Devi P. Sujatha¹⁵¹⁶¹⁷¹⁸^ORCID,Lee Yongjae¹²³⁴⁵

Affiliation:

1. Department of Earth System Sciences

2. Yonsei University

3. Seoul 120749

4. Korea

5. Center for High Pressure Science and Technology Advanced Research

6. Shanghai

7. China

8. Department of Physics

9. Hanyang University

10. Seoul 133791

11. Nano Center & Department of Chemistry and Biochemistry

12. University of South Carolina

13. Columbia

14. USA

15. Sensor and Actuator Division

16. CSIR-Central Glass and Ceramic Research Institute

17. Kolkata 700032

18. India

Abstract

The pressure-induced redistribution of native defects and the optoelectronic response in ZnO microstructures might provide new opportunities in promising semiconductors.

Funder

Ministry of Science, ICT and Future Planning

National Research Foundation of Korea

Ministry of New and Renewable Energy India

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/RA/C8RA10219H

Reference63 articles.

1. Defects in Semiconductors: Some Fatal, Some Vital

2. Charged point defects in semiconductors

3. Functional Ion Defects in Transition Metal Oxides

4. Semiconductor Solid-Solution Nanostructures: Synthesis, Property Tailoring, and Applications

5. One-Dimensional Fast Migration of Vacancy Clusters in Metals

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