Controllable synthesis of high quality monolayer WS2 on a SiO2/Si substrate by chemical vapor deposition
Author:
Affiliation:
1. Department of Materials Science & Engineering
2. CAS Key Lab of Materials for Energy Conversion
3. University of Science and Technology of China
4. Hefei
5. China
6. Molecular Foundry
7. Lawrence Berkeley National Laboratory
8. Berkeley
9. USA
Abstract
Tungsten disulfide (WS2), with its transformation from indirect to direct band transitions when scaled down to a monolayer, exhibits great potential for future micro-device applications.
Publisher
Royal Society of Chemistry (RSC)
Subject
General Chemical Engineering,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2015/RA/C5RA00210A
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