A universal growth method for high-quality phase-engineered germanium chalcogenide nanosheets-Reference-Cited by-同舟云学术

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A universal growth method for high-quality phase-engineered germanium chalcogenide nanosheets

Published:2023 Issue:9 Volume:15 Page:4438-4447
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Qu Junyu¹²^ORCID,Liu Chenxi¹²,Zubair Muhammad¹²,Zeng Zhouxiaosong²,Liu Bo¹²,Yang Xin¹²,Luo Ziyu¹²,Yi Xiao¹²,Chen Ying¹²,Chen Shula¹²,Pan Anlian¹²^ORCID

Affiliation:

1. Key Laboratory for Micro-Nano Physics and Technology of Hunan Province, College of Materials Science and Engineering, Hunan University, Changsha, Hunan 410082, P.R. China

2. Hunan Institute of Optoelectronic Integration, Hunan University, Changsha, 410082, China

Abstract

Germanium chalcogenide nanosheets with controllable phase transition are synthesized by a hydrogen-mediated CVD strategy. The systematic investigation can facilitate researchers to screen reasonable materials to achieve different functions.

Funder

Natural Science Foundation of Hunan Province

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2023/NR/D2NR05657G

Reference76 articles.

1. Recent Advances in Ultrathin Two-Dimensional Nanomaterials

2. Ultrathin Two-Dimensional Nanomaterials

3. Van der Waals stacked 2D layered materials for optoelectronics

4. Synthesis of Semiconductor Nanocrystals, Focusing on Nontoxic and Earth-Abundant Materials

5. Two-dimensional materials from high-throughput computational exfoliation of experimentally known compounds

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