Low-temperature crystallization and paraelectric–ferroelectric phase transformation in nanoscale ZrO2 thin films induced by atomic layer plasma treatment-Reference-Cited by-同舟云学术

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Low-temperature crystallization and paraelectric–ferroelectric phase transformation in nanoscale ZrO2 thin films induced by atomic layer plasma treatment

Published:2020 Issue:11 Volume:8 Page:3669-3677
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Yi Sheng-Han¹²³⁴^ORCID,Huang Kuei-Wen¹²³⁴,Lin Hsin-Chih¹²³⁴,Chen Miin-Jang¹²³⁴

Affiliation:

1. Department of Materials Science and Engineering

2. National Taiwan University

3. Taipei 106

4. Taiwan

Abstract

Crystallization and ferroelectricity with high endurance are achieved in ZrO₂ thin films at low temperature using an atomic layer plasma treatment technique.

Funder

Taiwan Semiconductor Manufacturing Company

Ministry of Science and Technology, Taiwan

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/C9TC04801D

Reference61 articles.

1. Ferroelectricity in hafnium oxide thin films

2. Ferroelectricity in Simple Binary ZrO2 and HfO2

3. Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

4. Ferroelectric Ceramics: History and Technology

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