Design and circuit simulation of nanoscale vacuum channel transistors-Reference-Cited by-同舟云学术

Design and circuit simulation of nanoscale vacuum channel transistors

Published:2020 Issue:8 Volume:2 Page:3582-3587
ISSN:2516-0230
Container-title:Nanoscale Advances
language:en
Short-container-title:Nanoscale Adv.

Author:

Xu Ji¹^ORCID,Qin Yaling²,Shi Yongjiao¹,Shi Yutong¹,Yang Yang³,Zhang Xiaobing¹

Affiliation:

1. Joint International Research Laboratory of Information Display and Visualization, School of Electronic Science and Engineering, Southeast University, Nanjing 210096, China

2. National Center for Nanoscience and Technology, Beijing 100190, China

3. Science and Technology on Monolithic Integrated Circuits and Modules Laboratory, Nanjing Electronic Device Institute, Nanjing 210016, China

Abstract

Nanoscale vacuum channel transistors (NVCTs) are promising candidates in electronics due to their high frequency, fast response and high reliability, and have attracted considerable attention for structural design and optimization.

Funder

National Natural Science Foundation of China

China Postdoctoral Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

General Engineering,General Materials Science,General Chemistry,Atomic and Molecular Physics, and Optics,Bioengineering

Link

http://pubs.rsc.org/en/content/articlepdf/2020/NA/D0NA00442A

Reference25 articles.

1. Tubes: still vital after all these years

2. Vacuum electronics