Improving pseudo-van der Waals epitaxy of self-assembled InAs nanowires on graphene via MOCVD parameter space mapping-Reference-Cited by-同舟云学术

Improving pseudo-van der Waals epitaxy of self-assembled InAs nanowires on graphene via MOCVD parameter space mapping

Published:2019 Issue:4 Volume:21 Page:602-615
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Baboli Mohadeseh A.¹²³⁴⁵^ORCID,Slocum Michael A.⁵²³⁴^ORCID,Kum Hyun⁵²³⁴^ORCID,Wilhelm Thomas S.¹²³⁴⁵^ORCID,Polly Stephen J.⁵²³⁴^ORCID,Hubbard Seth M.¹²³⁴⁵^ORCID,Mohseni Parsian K.¹²³⁴⁵^ORCID

Affiliation:

1. Microsystems Engineering

2. Rochester Institute of Technology

3. Rochester

4. USA

5. NanoPower Research Laboratories

Abstract

Self-assembly of InAs nanowire arrays with highest reported aspect ratios and number density by van der Waals epitaxy on graphene is presented.

Funder

National Science Foundation

Intelligence Community Postdoctoral Research Fellowship Program

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/CE/C8CE01666F

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