Defect-free zinc-blende structured InAs nanowires realized by in situ two V/III ratio growth in molecular beam epitaxy-Reference-Cited by-同舟云学术

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Defect-free zinc-blende structured InAs nanowires realized by in situ two V/III ratio growth in molecular beam epitaxy

Published:2015 Issue:29 Volume:7 Page:12592-12597
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Zhang Zhi¹²³,Lu Zhen-Yu⁴⁵⁶⁷,Chen Ping-Ping⁴⁵⁶⁷,Lu Wei⁴⁵⁶⁷,Zou Jin¹²³⁸²

Affiliation:

1. Materials Engineering

2. The University of Queensland

3. St. Lucia, Australia

4. National Laboratory for Infrared Physics

5. Shanghai Institute of Technical Physics

6. Chinese Academy of Sciences

7. Shanghai 200083, China

8. Centre for Microscopy and Microanalysis

Abstract

A two-V/III-ratio process to control the growth of pure defect-free zinc-blende structured InAs nanowires.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2015/NR/C5NR03503A

Reference39 articles.

1. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices

2. Distinct Photocurrent Response of Individual GaAs Nanowires Induced by n-Type Doping

3. Nanowires: Anomalous and Highly Efficient InAs Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature (Adv. Mater. 48/2014)

4. Single-nanowire solar cells beyond the Shockley–Queisser limit

5. Phase Separation Induced by Au Catalysts in Ternary InGaAs Nanowires

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1. Long catalyst-free InAs nanowires grown on silicon by HVPE;CrystEngComm;2021

2. Ideal strength of nanoscale materials induced by elastic instability;Mechanics of Materials;2020-01

3. In situ TEM observation of the vapor–solid–solid growth of <001̄> InAs nanowires;Nanoscale;2020

4. Free-Standing InAs Nanobelts Driven by Polarity in MBE;ACS Applied Materials & Interfaces;2019-11-05

5. GaAs Nanowires Grown by Catalyst Epitaxy for High Performance Photovoltaics;Crystals;2018-08-29

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