Nanowires: Anomalous and Highly Efficient InAs Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature (Adv. Mater. 48/2014)-Reference-Cited by-同舟云学术

Nanowires: Anomalous and Highly Efficient InAs Nanowire Phototransistors Based on Majority Carrier Transport at Room Temperature (Adv. Mater. 48/2014)

Published:2014-12 Issue:48 Volume:26 Page:8232-8232
ISSN:0935-9648
Container-title:Advanced Materials
language:en
Short-container-title:Adv. Mater.

Author:

Guo Nan¹,Hu Weida¹,Liao Lei²,Yip SenPo³,Ho Johnny C.³,Miao Jinshui¹,Zhang Zhi⁴,Zou Jin⁴⁵,Jiang Tao⁶,Wu Shiwei⁶,Chen Xiaoshuang¹,Lu Wei¹

Affiliation:

1. National Laboratory for Infrared Physics; Shanghai Institute of Technical Physics; Chinese Academy of Sciences; 500 Yutian Road Shanghai 200083 China

2. Department of Physics and Key Laboratory of Artificial Micro- and Nano-structures of Ministry of Education; Wuhan University; Wuhan 430072 China

3. Department of Physics and Materials Science; City University of Hong Kong; Hong Kong SAR China

4. Material Engineering; The University of Queensland; St Lucia QLD 4072 Australia

5. Centre for Microscopy and Microanalysis; The University of Queensland; St Lucia QLD 4072 Australia

6. State Key Laboratory of Surface Physics and Department of Physics; Fudan University; Shanghai 200433 China

Publisher

Wiley

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

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