Resonant doping for high mobility transparent conductors: the case of Mo-doped In2O3

Author:

Swallow Jack E. N.1234ORCID,Williamson Benjamin A. D.56748ORCID,Sathasivam Sanjayan5674ORCID,Birkett Max1234ORCID,Featherstone Thomas J.1234,Murgatroyd Philip A. E.1234,Edwards Holly J.1234,Lebens-Higgins Zachary W.910111213ORCID,Duncan David A.14154ORCID,Farnworth Mark1617184,Warren Paul1617184,Peng Nianhua1920214,Lee Tien-Lin14154,Piper Louis F. J.910111213ORCID,Regoutz Anna5674ORCID,Carmalt Claire J.5674ORCID,Parkin Ivan P.5674ORCID,Dhanak Vin R.1234,Scanlon David O.56748ORCID,Veal Tim D.1234ORCID

Affiliation:

1. Department of Physics and Stephenson Institute for Renewable Energy

2. University of Liverpool

3. Liverpool

4. UK

5. Department of Chemistry

6. University College London

7. London, WC1H 0AJ

8. Thomas Young Centre

9. Department of Physics

10. Applied Physics and Astronomy

11. Binghamton University

12. Binghamton

13. USA

14. Diamond Light Source, Harwell Science and Innovation Campus

15. Didcot

16. NSG Group

17. European Technical Centre Hall Lane

18. Ormskirk

19. Surrey Ion Beam Centre

20. University of Surrey

21. Surrey

Abstract

Superior transparent conducting properties of indium oxide realised by molybdenum donors resonant in the conduction band, avoiding detrimental effects of tin doping.

Funder

Air Force Office of Scientific Research

Office of Science

Engineering and Physical Sciences Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Electrical and Electronic Engineering,Process Chemistry and Technology,Mechanics of Materials,General Materials Science

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