A SIMS study of cation and anion diffusion in tantalum oxide
Author:
Affiliation:
1. Institute of Physical Chemistry and JARA-FIT, RWTH Aachen University
2. 52056 Aachen
3. Germany
4. Peter Grünberg Institute (PGI-7), Forschungszentrum Jülich GmbH
5. Institute of Electronic Materials (IWE2), RWTH Aachen University
Abstract
Diffusion experiments reveal that anions are more mobile than cations in L-Ta2O5; together with literature data, they suggest that oxygen interstitials are the defects responsible for anion diffusion.
Funder
Deutsche Forschungsgemeinschaft
Publisher
Royal Society of Chemistry (RSC)
Subject
Physical and Theoretical Chemistry,General Physics and Astronomy
Link
http://pubs.rsc.org/en/content/articlepdf/2018/CP/C7CP07441G
Reference53 articles.
1. Electronic properties of tantalum pentoxide polymorphs from first-principles calculations
2. Electronic structure and stability of low symmetry Ta2 O5 polymorphs
3. Hidden Structural Order in OrthorhombicTa2O5
4. Defect Structure of Ta2O5
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