Electronic properties of tantalum pentoxide polymorphs from first-principles calculations
Author:
Affiliation:
1. Department of Materials Science and Engineering, University of Michigan, Ann Arbor 48109, USA
2. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor 48109, USA
Funder
National Science Foundation (NSF)
U.S. Department of Energy (DOE)
Air Force Office of Scientific Research (AFOSR)
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/am-pdf/10.1063/1.4901939
Reference37 articles.
1. Tantalum pentoxide (Ta2O5) thin films for advanced dielectric applications
2. UV-O/sub 3/ and dry-O/sub 2/: Two-step-annealed chemical vapor-deposited Ta/sub 2/O/sub 5/ films for storage dielectrics of 64-Mb DRAMs
3. Material constants of new piezoelectric Ta2O5thin films
4. Preparation and performances of nanosized Ta2O5 powder photocatalyst
5. A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures
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