A study on the diffusion properties of oxygen in Al and W-doped λ-Ta2O5-Reference-Cited by-同舟云学术

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A study on the diffusion properties of oxygen in Al and W-doped λ-Ta2O5

Published:2021-12-01 Issue:12 Volume:11 Page:125302
ISSN:2158-3226
Container-title:AIP Advances
language:en
Short-container-title:AIP Advances

Author:

Wu Xinghui¹^ORCID,Cui Nana²,Zhang Qiuhui¹,Wang Wenju³^ORCID,Xu Qixing¹

Affiliation:

1. School of Electrical Information Engineering, Henan University of Engineering, Zhengzhou 451191, People’s Republic of China

2. School of Mechanical Engineering, Henan University of Engineering, Zhengzhou 451191, People’s Republic of China

3. School of Energy and Power Engineering, Nanjing University of Science and Technology, Nanjing 210094, People’s Republic of China

Funder

Henan Provincial Science and Technology Research Project

National Natural Science Foundation of China

National Natural Science Foundation of China-Henan Joint Fund

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

https://aip.scitation.org/doi/pdf/10.1063/5.0064536

Reference27 articles.

1. Fully hardware-implemented memristor convolutional neural network

2. In-memory computing with resistive switching devices

3. Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping

4. The role of nitrogen doping in ALD Ta2O5 and its influence on multilevel cell switching in RRAM

5. Tuning Resistive Switching Characteristics of Tantalum Oxide Memristors through Si Doping

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