Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping-Reference-Cited by-同舟云学术

Enhanced switching stability in Ta2O5 resistive RAM by fluorine doping

Published:2017-08-28 Issue:9 Volume:111 Page:092904
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Sedghi N.¹^ORCID,Li H.²^ORCID,Brunell I. F.³,Dawson K.³^ORCID,Guo Y.²⁴,Potter R. J.³^ORCID,Gibbon J. T.⁵^ORCID,Dhanak V. R.⁵,Zhang W. D.⁶,Zhang J. F.⁶,Hall S.¹^ORCID,Robertson J.²,Chalker P. R.³^ORCID

Affiliation:

1. Department of Electrical Engineering and Electronics, University of Liverpool, Liverpool L69 3GJ, United Kingdom

2. Department of Engineering, University of Cambridge, Cambridge CB2 1TN, United Kingdom

3. School of Engineering, University of Liverpool, Liverpool L69 3GH, United Kingdom

4. College of Engineering, Swansea University, Swansea SA1 8EN, United Kingdom

5. Department of Physics, University of Liverpool, Liverpool L69 7ZE, United Kingdom

6. Department of Electronics and Electrical Engineering, Liverpool John Moores University, Liverpool L3 3AF, United Kingdom

Funder

Engineering and Physical Sciences Research Council (EPSRC)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4991879

Reference31 articles.

1. Resistive Random Access Memory (ReRAM) Based on Metal Oxides

2. Metal–Oxide RRAM

3. Impact of oxygen exchange reaction at the ohmic interface in Ta2O5-based ReRAM devices

4. Engineering ReRAM for high-density applications

5. Memristive switching mechanism for metal/oxide/metal nanodevices

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