Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaO<sub><i>x</i></sub> gate dielectric-Reference-Cited by-同舟云学术

Transparent electronic and photoelectric synaptic transistors based on the combination of an InGaZnO channel and a TaO_x gate dielectric

Published:2022 Issue:28 Volume:14 Page:10245-10254
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Li Yuanbo¹^ORCID,Chen Tupei¹,Ju Xin¹,Salim Teddy²

Affiliation:

1. School of Electrical and Electronic Engineering, Nanyang Technological University, 639798, Singapore

2. School of Materials Science and Engineering, Nanyang Technological University, 639798, Singapore

Abstract

This article demonstrated a transparent TFT which showed synaptic behaviors in either electronic mode or photoelectric mode. Potentiation/depression with large conductance change and ultra-low non-linearity were achieved concurrently.

Funder

Ministry of Education - Singapore

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2022/NR/D2NR02136F

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