Photovoltage junction memtransistor for optoelectronic in-memory computing-Reference-Cited by-同舟云学术

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Photovoltage junction memtransistor for optoelectronic in-memory computing

Published:2024 Issue:33 Volume:12 Page:12763-12768
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Li Xueming¹,Wang Sujuan¹,Yang Yani¹,Xu Shankun¹,Bao Xueyan²,zhao Lei¹,Liu Xueting¹,Pan Zhidong¹,Yang Yujue³,Su Shichen¹^ORCID,Huo Nengjie¹^ORCID

Affiliation:

1. Guangdong Provincial Key Laboratory of Chip and Integration Technology, School of Electronic Science and Engineering, South China Normal University, Foshan 528225, P. R. China

2. RWTH International Academy gGmbH, RWTH Aachen University, Aachen 52074, Germany

3. School of Physics and Optoelectronic Engineering, Guangdong University of Technology, Guangzhou 510006, China

Abstract

The ZnO/WSe2 memory device exhibits optoelectronic switching behavior, allowing for laser pulse-induced memory and voltage pulse-induced erasing, which represents a significant advancement in optoelectronic in-memory computing.

Funder

Basic and Applied Basic Research Foundation of Guangdong Province

Publisher

Royal Society of Chemistry (RSC)

Link

http://pubs.rsc.org/en/content/articlepdf/2024/TC/D4TC03015J

Reference32 articles.

1. Mixed-precision in-memory computing

2. Logic Synthesis for Digital In-Memory Computing

3. Emerging 2D Memory Devices for In‐Memory Computing

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