Low-Voltage Synaptic Transistors Based on PrO<sub>x</sub>/ZrO<sub>2</sub> Bilayer Dielectric for Neuromorphic Computing-Reference-Cited by-同舟云学术

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Low-Voltage Synaptic Transistors Based on PrO_x/ZrO₂ Bilayer Dielectric for Neuromorphic Computing

Published:2024-04 Issue:4 Volume:71 Page:2702-2707
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Miao Guangtan¹,Chen Limeng¹,Ci Ranran¹,Yin Zezhong¹,Hao Dandan¹,Liu Guoxia¹,Shan Fukai¹^ORCID

Affiliation:

1. College of Physics and College of Microtechnology and Nanotechnology, Qingdao University, Qingdao, China

Funder

Natural Science Foundation of Shandong Province

National Key Research and Development Program of China

National Natural Science Foundation of China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10482422/10440269.pdf?arnumber=10440269

Reference45 articles.

1. Electrolyte-gated transistors for synaptic electronics, neuromorphic computing, and adaptable biointerfacing

2. Neuromorphic devices based on fluorite‐structured ferroelectrics

3. Perspective on oxide-based three-terminal artificial synapses in physical neural networks

4. Electrospun ZnSnO Nanofibers for Neuromorphic Transistors With Ultralow Energy Consumption

5. Recent progress in ferroelectric synapses and their applications

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