In situ removal of a native oxide layer from an amorphous silicon surface with a UV laser for subsequent layer growth-Reference-Cited by-同舟云学术

In situ removal of a native oxide layer from an amorphous silicon surface with a UV laser for subsequent layer growth

Published:2018 Issue:44 Volume:20 Page:7170-7177
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Ehlers Christian¹²³^ORCID,Kayser Stefan¹²³^ORCID,Uebel David¹²³^ORCID,Bansen Roman¹²³,Markurt Toni¹²³^ORCID,Teubner Thomas¹²³^ORCID,Hinrichs Karsten⁴²³^ORCID,Ernst Owen¹²³^ORCID,Boeck Torsten¹²³^ORCID

Affiliation:

1. Leibniz Institut für Kristallzüchtung (IKZ)

2. 12489 Berlin

3. Germany

4. Leibniz-Institut für Analytische Wissenschaften – ISAS e.V

Abstract

An in situ method for selectively heating a substrate by a laser pulse was modelled and investigated experimentally.

Funder

Deutsche Forschungsgemeinschaft

Bundesministerium für Bildung und Forschung

European Regional Development Fund

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CE/C8CE01170B

Reference38 articles.

1. Growth of native oxide on a silicon surface

2. Oxidation mechanism of amorphous silicon in air

3. XPS Study of H-Terminated Silicon Surface under Inert Gas and UHV Annealing

4. Hydrocarbon reaction with HF‐cleaned Si(100) and effects on metal‐oxide‐semiconductor device quality

5. Crystalline silicon on glass by steady-state solution growth using indium as solvent

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