Fast Raman mapping and in situ TEM observation of metal induced crystallization of amorphous silicon
Author:
Affiliation:
1. Leibniz-Institut für Kristallzüchtung
2. 12489 Berlin
3. Germany
4. Weierstraß-Institut für Angewandte Analysis und Stochastik
5. 10117 Berlin
Abstract
Crystalline silicon is grown onto an amorphous silicon (a-Si) seed layer from a liquid tin solution (steady state liquid phase epitaxy, SSLPE).
Publisher
Royal Society of Chemistry (RSC)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2020/CE/D0CE00960A
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5. Freestanding and supported processing of sub-70 μm kerfless epitaxial Si and thinned Cz/FZ Si foils into solar cells: An overview of recent progress and challenges
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