Detection of a high photoresponse at zero bias from a highly conducting ZnO:Ga based UV photodetector-Reference-Cited by-同舟云学术

Detection of a high photoresponse at zero bias from a highly conducting ZnO:Ga based UV photodetector

Published:2015 Issue:104 Volume:5 Page:85523-85529
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Sharma Pankaj¹²³⁴,Singh Rohit¹²³⁴,Awasthi Vishnu¹²³⁴,Pandey Sushil K.⁵⁶⁷⁴,Garg Vivek¹²³⁴,Mukherjee Shaibal¹²³⁴

Affiliation:

1. Hybrid Nanodevice Research Group (HNRG)

2. Indian Institute of Technology

3. Indore 453446

4. India

5. Department of Electrical Engineering

6. Indian Institute of Technology Bombay

7. Mumbai 400076

Abstract

Ga-doped ZnO based ultraviolet photodetectors (PDs) were fabricated with a metal–semiconductor–metal structure. The room-temperature operable PDs had 58 mA W⁻¹ responsivity at zero bias with internal and external quantum efficiency values of ∼22.5 and 37.4%.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/RA/C5RA13921J

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