Y<sub>2</sub>O<sub>3</sub>-Based Crossbar Array for Analog and Neuromorphic Computation-Reference-Cited by-同舟云学术

Y₂O₃-Based Crossbar Array for Analog and Neuromorphic Computation

Published:2023-02 Issue:2 Volume:70 Page:473-477
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Kumar Sanjay¹^ORCID,Kumbhar Dhananjay D.²^ORCID,Park Jun H.²^ORCID,Kamat Rajanish K.³,Dongale Tukaram D.⁴^ORCID,Mukherjee Shaibal⁵^ORCID

Affiliation:

1. Department of Electrical Engineering, Hybrid Nanodevice Research Group (HNRG), IIT Indore, Simrol, India

2. Department of Materials Engineering and Convergence Technology, Gyeongsang National University, Jinju, Republic of Korea

3. Department of Electronics, Shivaji University, Kolhapur, India

4. Computational Electronics and Nanoscience Research Laboratory, School of Nanoscience and Biotechnology, Shivaji University, Kolhapur, India

5. Department of Electrical Engineering and the Centre for Advanced Electronics (CAE), Hybrid Nanodevice Research Group (HNRG), IIT Indore, Simrol, India

Funder

Council of Scientific and Industrial Research

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/16/10025571/09992225.pdf?arnumber=9992225

Reference35 articles.

1. Hafnium Oxide (HfO ₂ ) – A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric Memories

2. Spike-timing-dependent synaptic modification induced by natural spike trains

3. Binder-Free Synthesis of Nanostructured Amorphous Cobalt Phosphate for Resistive Memory and Artificial Synaptic Device Applications

4. Ultrafast Synaptic Events in a Chalcogenide Memristor

5. Electronic imitation of behavioral and psychological synaptic activities using TiOx/Al2O3-based memristor devices

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Coupling-Free Readout Scheme for Memcapacitors With NAND Flash Structure;IEEE Transactions on Electron Devices;2024-08

2. Compliance-free, analog RRAM devices based on SnOx;Scientific Reports;2024-06-19

3. Exploring statistical approaches for accessing the reliability of Y2O3-based memristive devices;Microelectronic Engineering;2024-05

4. 2D MoS2 monolayers integration with metal oxide-based artificial synapses;Frontiers in Nanotechnology;2024-04-29

5. Optoelectronic Synapse Behaviors of HfS2 Grown via Molten Salt Flux Method;Electronic Materials Letters;2024-04-13