Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors-Reference-Cited by-同舟云学术

Plasma-assisted atomic layer deposition and post-annealing enhancement of low resistivity and oxygen-free nickel nano-films using nickelocene and ammonia precursors

Published:2016 Issue:47 Volume:4 Page:11059-11066
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Wang Yong-Ping¹²³⁴⁵,Ding Zi-Jun¹²³⁴⁵,Liu Qi-Xuan¹²³⁴⁵,Liu Wen-Jun¹²³⁴⁵,Ding Shi-Jin¹²³⁴⁵,Zhang David Wei¹²³⁴⁵

Affiliation:

1. State Key Laboratory of ASIC and System

2. School of Microelectronics

3. Fudan University

4. Shanghai 200433

5. China

Abstract

Oxygen-free and low resistivity nickel (Ni) thin films are successfully prepared by plasma-assisted atomic layer deposition using nickelocene (NiCp₂) as a metal precursor and ammonia (NH₃) as a reactant.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TC/C6TC03606F

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1. High-performance nonhydrogenated nickel-induced laterally crystallized P-channel poly-Si TFTs

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5. Characterization and performance evaluation of Ni-based catalysts with Ce promoter for methane and hydrocarbons steam reforming process

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