Effects of Fe doping on the strain and optical properties of GaN epilayers grown on sapphire substrates-Reference-Cited by-同舟云学术

Effects of Fe doping on the strain and optical properties of GaN epilayers grown on sapphire substrates

Published:2014 Issue:98 Volume:4 Page:55430-55434
ISSN:2046-2069
Container-title:RSC Adv.
language:en
Short-container-title:RSC Adv.

Author:

Zheng C. C.¹²³⁴⁵,Ning J. Q.⁴⁵⁶⁷,Wu Z. P.⁴⁵⁶⁷,Wang J. F.⁸⁹³,Zhao D. G.¹⁰¹¹⁹¹²,Xu K.⁸⁹³,Gao J.⁴⁵⁶⁷,Xu S. J.⁴⁵⁶⁷

Affiliation:

1. Mathematics and Physics Centre

2. Xi'an Jiaotong-Liverpool University

3. Suzhou 215123, China

4. Department of Physics

5. HKU-Shenzhen Institute of Research and Innovation (HKU-SIRI), and HKU-CAS Joint Laboratory on New Materials

6. The University of Hong Kong

7. Hong Kong, China

8. Suzhou Institute of Nano-Tech and Nano-Bionics

9. Chinese Academy of Sciences

10. State Key Laboratory on Integrated Optoelectronics

11. Institute of Semiconductors

12. Beijing 100083, China

Abstract

The effects of Fe doping on a series of Fe-doped GaN epilayers with different doping concentrations grown on sapphire substrates were investigated in detail by confocal micro-Raman spectroscopy under the back-scattering geometric configuration.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2014/RA/C4RA12218F

Reference28 articles.

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2. S. Nakamura , G.Fasol and S. J.Pearton, The Blue Laser Diodes, Springer, Berlin, 2000

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4. Electrical and optical properties of Fe-doped semi-insulating GaN templates

5. Optimization of Fe doping at the regrowth interface of GaN for applications to III-nitride-based heterostructure field-effect transistors

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