Voltage-polarity dependent multi-mode resistive switching on sputtered MgO nanostructures-Reference-Cited by-同舟云学术

Voltage-polarity dependent multi-mode resistive switching on sputtered MgO nanostructures

Published:2017 Issue:17 Volume:19 Page:10898-10904
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Dias Catarina¹²³⁴,Guerra Luís. M.¹²³⁴,Bordalo Bernardo D.¹²³⁴^ORCID,Lv Hua⁵⁶⁴,Ferraria Ana M.⁷⁸⁹⁶⁴,Botelho do Rego Ana M.⁷⁸⁹⁶⁴,Cardoso Susana⁵⁶⁴,Freitas Paulo P.⁵⁶⁴,Ventura João¹²³⁴^ORCID

Affiliation:

1. IFIMUP-IN and Department of Physics and Astronomy

2. Faculty of Sciences

3. Porto

4. Portugal

5. INESC-MN and IN – Institute of Nanoscience and Nanotechnology

6. Lisboa

7. Centro de Química-Física Molecular and Institute of Nanoscience and Nanotechnology

8. IST

9. Universidade de Lisboa

Abstract

The variability of resistive switching parameters can be minimized by choosing the proper voltage-polarity mode.

Funder

Fundação para a Ciência e a Tecnologia

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2017/CP/C7CP00062F

Reference58 articles.

1. Memristor-The missing circuit element

2. The missing memristor found

3. Nanoionics-based resistive switching memories

4. Memristive devices for computing

5. Conduction mechanism of resistive switching films in MgO memory devices

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