Halide perovskite memristor with ultra-high-speed and robust flexibility for artificial neuron applications-Reference-Cited by-同舟云学术

Halide perovskite memristor with ultra-high-speed and robust flexibility for artificial neuron applications

Published:2022 Issue:39 Volume:10 Page:14695-14702
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Tang Lingzhi¹²,Huang Yang¹,Wang Chen²³^ORCID,Zhao Zhenxuan⁴,Yang Yiming¹,Bian Jiming⁵^ORCID,Wu Huaqiang⁴^ORCID,Zhang Zengxing²³,Zhang David Wei²³

Affiliation:

1. School of Microelectronics, Dalian University of Technology, Dalian Liaoning, 116024, China

2. State Key Laboratory of ASIC and Systems, School of Microelectronics, Fudan University, Shanghai, 200433, China

3. National Integrated Circuit Innovation Centre, Shanghai, 201203, China

4. Institute of Microelectronics, Tsinghua University, Beijing, 100084, China

5. Key Laboratory of Materials Modification by Laser, Ion and Electron Beams (Ministry of Education), School of Physics, Dalian University of Technology, Dalian Liaoning, 116024, China

Abstract

We report a halide perovskite based flexible threshold-switched memristor with ultra-high speed as an artificial neuron that exhibits excellent leaky integrate-and-fire dynamics and strength-modulated spike frequency response performance.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2022/TC/D2TC03355K

Reference53 articles.

1. Highly Compact Artificial Memristive Neuron with Low Energy Consumption

2. Threshold Switching of Ag or Cu in Dielectrics: Materials, Mechanism, and Applications

3. Artificial Neurons Based on Ag/V2C/W Threshold Switching Memristors