Wurtzite CoO: a direct band gap oxide suitable for a photovoltaic absorber-Reference-Cited by-同舟云学术

Wurtzite CoO: a direct band gap oxide suitable for a photovoltaic absorber

Published:2018 Issue:99 Volume:54 Page:13949-13952
ISSN:1359-7345
Container-title:Chemical Communications
language:en
Short-container-title:Chem. Commun.

Author:

Wang Y.¹²³⁴⁵^ORCID,Ge H. X.⁶⁷⁸⁴^ORCID,Chen Y. P.⁶⁷⁸⁴^ORCID,Meng X. Y.⁹¹⁰¹¹¹²^ORCID,Ghanbaja J.⁵¹³¹⁴¹⁵¹⁶^ORCID,Horwat D.⁵¹³¹⁴¹⁵¹⁶^ORCID,Pierson J. F.⁵¹³¹⁴¹⁵¹⁶^ORCID

Affiliation:

1. State Key Laboratory for Environmental-friendly Energy Materials

2. Southwest University of Science and Technology

3. Mianyang 621010

4. China

5. Institut Jean Lamour

6. School of Physics and Optoelectronics

7. Xiangtan University

8. Xiangtan 411105

9. Center for Green Research on Energy and Environmental Materials

10. National Institute for Materials Science

11. Tsukuba 305-0047

12. Japan

13. UMR 7198-CNRS

14. Université de Lorraine

15. Nancy 54011

16. France

Abstract

Wurtzite CoO is a p-type semiconductor with a direct band gap of 1.6 eV and an intense sub-gap absorption.

Funder

National Natural Science Foundation of China

Southwest University of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,Metals and Alloys,Surfaces, Coatings and Films,General Chemistry,Ceramics and Composites,Electronic, Optical and Magnetic Materials,Catalysis

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CC/C8CC06777E

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