Sliding ferroelectricity in two-dimensional MoA2N4 (A = Si or Ge) bilayers: high polarizations and Moiré potentials-Reference-Cited by-同舟云学术

Sliding ferroelectricity in two-dimensional MoA2N4 (A = Si or Ge) bilayers: high polarizations and Moiré potentials

Published:2021 Issue:35 Volume:9 Page:19659-19663
ISSN:2050-7488
Container-title:Journal of Materials Chemistry A
language:en
Short-container-title:J. Mater. Chem. A

Author:

Zhong Tingting¹,Ren Yangyang²,Zhang Zhuhua³,Gao Jinhua²,Wu Menghao²^ORCID

Affiliation:

1. Department of Physics, Zhejiang Sci-Tech University, Hangzhou, Zhejiang 310018, China

2. School of Physics, Huazhong University of Science and Technology, Wuhan, Hubei 430074, China

3. State Key Laboratory of Mechanics and Control of Mechanical Structures, Nanjing University of Aeronautics and Astronautics, Nanjing, Jiangsu 210016, China

Abstract

Strong sliding-ferroelectricity is predicted in high-mobility semiconducting MoSi2N4 bilayers, and a small angle twist will induce strong Moiré potential and unique band alignment for exciton trapping.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science,Renewable Energy, Sustainability and the Environment,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/TA/D1TA02645C

Reference40 articles.

1. Intrinsic Ferroelasticity and/or Multiferroicity in Two-Dimensional Phosphorene and Phosphorene Analogues

2. Gate-Tunable In-Plane Ferroelectricity in Few-Layer SnS

3. Discovery of robust in-plane ferroelectricity in atomic-thick SnTe

4. Few-layer tin sulfide (SnS): Controlled synthesis, thickness dependent vibrational properties, and ferroelectricity

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