Discovery of robust in-plane ferroelectricity in atomic-thick SnTe

Author:

Chang Kai12,Liu Junwei123,Lin Haicheng12,Wang Na12,Zhao Kun12,Zhang Anmin4,Jin Feng4,Zhong Yong12,Hu Xiaopeng12,Duan Wenhui12,Zhang Qingming45,Fu Liang3,Xue Qi-Kun12,Chen Xi12,Ji Shuai-Hua126

Affiliation:

1. State Key Laboratory of Low-Dimensional Quantum Physics, Department of Physics, Tsinghua University, Beijing 100084, China.

2. Collaborative Innovation Center of Quantum Matter, Beijing 100084, China.

3. Department of Physics, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.

4. Department of Physics, Beijing Key Laboratory of Optoelectronic Functional Materials and Micro-Nano Devices, Renmin University of China, Beijing 100872, China.

5. Collaborative Innovation Center of Advanced Microstructures, Nanjing 210093, China.

6. RIKEN Center for Emergent Matter Science (CEMS), Wako, Saitama 351-0198, Japan.

Abstract

Thinning a ferroelectric makes it better As a ferroelectric material becomes thinner, the temperature below which it develops its permanent electrical polarization usually decreases. Chang et al. fabricated high-quality thin films of SnTe that, in contrast to this conventional wisdom, had a considerably higher transition temperature than that of the material in bulk (see the Perspective by Kooi and Noheda). This was true even for single-unit cell films, whereas only slightly thicker films became ferroelectric above room temperature. This finding may enable the miniaturization of ferroelectric devices. Science , this issue p. 274 ; see also p. 221

Funder

National Natural Science Foundation

Ministry of Science and Technology of China

NSF

DOE Office of Basic Energy Sciences, Division of Materials Sciences and Engineering

Publisher

American Association for the Advancement of Science (AAAS)

Subject

Multidisciplinary

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