Gate-Tunable In-Plane Ferroelectricity in Few-Layer SnS-Reference-Cited by-同舟云学术

Gate-Tunable In-Plane Ferroelectricity in Few-Layer SnS

Published:2019-06-28 Issue:8 Volume:19 Page:5109-5117
ISSN:1530-6984
Container-title:Nano Letters
language:en
Short-container-title:Nano Lett.

Author:

Bao Yang¹^ORCID,Song Peng¹,Liu Yanpeng¹^ORCID,Chen Zhihui¹,Zhu Menglong¹,Abdelwahab Ibrahim¹^ORCID,Su Jie¹,Fu Wei¹,Chi Xiao¹,Yu Wei¹,Liu Wei¹^ORCID,Zhao Xiaoxu¹^ORCID,Xu Qing-Hua¹^ORCID,Yang Ming²^ORCID,Loh Kian Ping¹^ORCID

Affiliation:

1. Department of Chemistry, National University of Singapore, Singapore 117543, Singapore

2. Institute of Materials Research and Engineering, Agency for Science, Technology and Research, Singapore 117602, Singapore

Publisher

American Chemical Society (ACS)

Subject

Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering

Link

https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.9b01419

Reference46 articles.

1. Conformable amplified lead zirconate titanate sensors with enhanced piezoelectric response for cutaneous pressure monitoring

2. Giant tunnel electroresistance for non-destructive readout of ferroelectric states

3. Above-bandgap voltages from ferroelectric photovoltaic devices

4. Applications of Modern Ferroelectrics

5. Critical thickness for ferroelectricity in perovskite ultrathin films

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