Gate-Tunable In-Plane Ferroelectricity in Few-Layer SnS
Author:
Affiliation:
1. Department of Chemistry, National University of Singapore, Singapore 117543, Singapore
2. Institute of Materials Research and Engineering, Agency for Science, Technology and Research, Singapore 117602, Singapore
Publisher
American Chemical Society (ACS)
Subject
Mechanical Engineering,Condensed Matter Physics,General Materials Science,General Chemistry,Bioengineering
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.nanolett.9b01419
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