Influence of interface properties on charge density, band edge shifts and kinetics of the photoelectrochemical process in p-type NiO photocathodes-Reference-Cited by-同舟云学术

Influence of interface properties on charge density, band edge shifts and kinetics of the photoelectrochemical process in p-type NiO photocathodes

Published:2015 Issue:88 Volume:5 Page:71778-71784
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Liu Qian¹²³⁴,Wei Lifang¹²³⁴,Yuan Shuai¹²³⁴,Ren Xin¹²³⁴,Zhao Yin¹²³⁴,Wang Zhuyi¹²³⁴,Zhang Meihong¹²³⁴,Shi Liyi¹²³⁴,Li Dongdong⁵⁶⁷⁸⁴,Li Aijun⁹²³⁴

Affiliation:

1. Research Center of Nanoscience and Nanotechnology

2. Shanghai University

3. Shanghai 200444

4. China

5. Division of Energy and Environment Research

6. Shanghai Advanced Research Institute

7. Chinese Academy of Sciences

8. Shanghai 201203

9. School of Materials

Abstract

The surface structure of NiO is correlated to observed changes in the band energy, energetic distribution of the trap states density, charge interface transfer, charge transport, and as a result the p-type DSSC device performance.

Funder

Natural Science Foundation of Shanghai

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/RA/C5RA13135A

Reference45 articles.

1. Recent advances and future directions to optimize the performances of p-type dye-sensitized solar cells

2. New Photovoltaic Devices Based on the Sensitization of p-type Semiconductors: Challenges and Opportunities

3. Recent Advances in the Sensitization of Wide-Band-Gap Nanostructured p-Type Semiconductors. Photovoltaic and Photocatalytic Applications

4. Charge Transport in Light Emitting Devices Based on Colloidal Quantum Dots and a Solution-Processed Nickel Oxide Layer

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