Charge Transport in Light Emitting Devices Based on Colloidal Quantum Dots and a Solution-Processed Nickel Oxide Layer
Author:
Affiliation:
1. Department of Energy Systems Research, Ajou University, Suwon, Gyeonggi-do 443−749, Republic of Korea
Publisher
American Chemical Society (ACS)
Subject
General Materials Science
Link
https://pubs.acs.org/doi/pdf/10.1021/am500593a
Reference33 articles.
1. Enhanced hole injections in organic light-emitting devices by depositing nickel oxide on indium tin oxide anode
2. Improved performance of the single-layer and double-layer organic light emitting diodes by nickel oxide coated indium tin oxide anode
3. Highly efficient organic light-emitting diodes fabricated utilizing nickel-oxide buffer layers between the anodes and the hole transport layers
4. NiO as an Inorganic Hole-Transporting Layer in Quantum-Dot Light-Emitting Devices
5. Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films
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