Bifunctional resistive switching behavior in an organolead halide perovskite based Ag/CH3NH3PbI3−xClx/FTO structure-Reference-Cited by-同舟云学术

Bifunctional resistive switching behavior in an organolead halide perovskite based Ag/CH3NH3PbI3−xClx/FTO structure

Author:

Yoo Eunji¹²³⁴⁵,Lyu Miaoqiang⁵⁶⁷⁸⁹,Yun Jung-Ho⁵⁶⁷⁸⁹,Kang Chijung¹⁰¹¹⁴,Choi Youngjin¹²³⁴,Wang Lianzhou⁵⁶⁷⁸⁹

Affiliation:

1. Department of Nanotechnology and Advanced Materials Engineering

2. Sejong University

3. Seoul 143-747

4. Republic of Korea

5. Nanomaterials Centre

6. School of Chemical Engineering and Australian Institute for Bioengineering and Nanotechnology

7. The University of Queensland

8. St Lucia QLD 4072

9. Australia

10. Department of Physics

11. Myongji University

Abstract

A simple organolead perovskite based device Ag/CH₃NH₃PbI_3−xCl_x/FTO exhibits both digital and analog switching memory features.

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

Reference49 articles.

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