An organic–inorganic hybrid perovskite logic gate for better computing-Reference-Cited by-同舟云学术

An organic–inorganic hybrid perovskite logic gate for better computing

Published:2015 Issue:41 Volume:3 Page:10793-10798
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Lin Guoming¹²³⁴⁵,Lin Yuanwei⁶⁷⁸⁹¹⁰,Cui Rongli¹²³⁴⁵,Huang Huan¹²³⁴⁵,Guo Xihong¹²³⁴⁵,Li Cheng¹²³⁴⁵,Dong Jinquan¹²³⁴⁵,Guo Xuefeng⁶⁷⁸⁹¹⁰,Sun Baoyun¹²³⁴⁵

Affiliation:

1. CAS Key Lab for Biomedical Effects of Nanomaterials and Nanosafety

2. Institute of High Energy Physics

3. Chinese Academy of Sciences (CAS)

4. Beijing 100049

5. China

6. Beijing National Laboratory for Molecular Sciences (BNLMS)

7. State Key Laboratory for Structural Chemistry of Unstable and Stable Species

8. College of Chemistry and Molecular Engineering

9. Peking University

10. Beijing 100871

Abstract

An electrically bistable and non-volatile rewritable memory effect on a sandwich architecture, ITO/PEDOT:PSS/organic–inorganic hybrid perovskite/Cu, is shown.

Funder

National Natural Science Foundation of China

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C5TC02270C

Reference36 articles.

1. First draft of a report on the EDVAC

2. Memory leads the way to better computing

3. Resistance switching memories are memristors

4. Memristor-The missing circuit element

5. Memristive devices and systems

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