Atomic layer deposition of ruthenium at 100 °C using the RuO4-precursor and H2-Reference-Cited by-同舟云学术

Atomic layer deposition of ruthenium at 100 °C using the RuO4-precursor and H2

Published:2015 Issue:1 Volume:3 Page:132-137
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Minjauw Matthias M.¹²³⁴⁵,Dendooven Jolien¹²³⁴⁵,Capon Boris¹²³⁴⁵,Schaekers Marc⁶⁷⁵,Detavernier Christophe¹²³⁴⁵

Affiliation:

1. Department of Solid State Sciences

2. CoCooN

3. Ghent University

4. B-9000 Ghent

5. Belgium

6. IMEC

7. B-3001 Leuven

Abstract

A novel Ru ALD process at 100 °C using the inorganic RuO₄-precursor in a reduction chemistry with H₂ is being reported, and a proposal for the underlying reaction mechanism is given.

Funder

European Research Council

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/TC/C4TC01961J

Reference23 articles.

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