Theoretical investigation of nonvolatile electrical control behavior by ferroelectric polarization switching in two-dimensional MnCl3/CuInP2S6 van der Waals heterostructures
Author:
Affiliation:
1. Tianjin Key Laboratory of Film Electronic & Communicate Devices
2. School of Electrical and Electronic Engineering
3. Tianjin University of Technology
4. Tianjin 300384
5. China
Abstract
A model of atom-thick multiferroic memory whose data writing depends on ferroelectric CuInP2S6 and data reading is based on different electric signals induced by magnetoelectrical coupling.
Funder
National Natural Science Foundation of China
Natural Science Foundation of Tianjin City
Tianjin Municipal Education Commission
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC00143K
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