A mechanistic study on graphene-based nonvolatile ReRAM devices-Reference-Cited by-同舟云学术

A mechanistic study on graphene-based nonvolatile ReRAM devices

Published:2016 Issue:47 Volume:4 Page:11007-11031
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Rani Adila¹²³⁴⁵,Kim Dong Ha¹²³⁴⁵^ORCID

Affiliation:

1. Department of Chemistry and Nano Science

2. Division of Molecular Life and Chemical Sciences

3. College of Natural Sciences

4. Ewha Womans University

5. Seoul 03760

Abstract

An overview of the switching mechanism of ReRAM devices employing graphene oxide (GO), reduced graphene oxide (rGO), hybrid GO, hybrid rGO, and graphene as dielectric layers or electrodes.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2016/TC/C6TC03509D

Reference48 articles.

1. Organic Resistive Memory Devices: Performance Enhancement, Integration, and Advanced Architectures

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3. Non-volatile resistive memory devices based on solution-processed ultrathin two-dimensional nanomaterials

4. Graphene and Graphene Oxide: Synthesis, Properties, and Applications

5. Layer-by-Layer Assembly for Graphene-Based Multilayer Nanocomposites: Synthesis and Applications

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