Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters-Reference-Cited by-同舟云学术

Quantified hole concentration in AlGaN nanowires for high-performance ultraviolet emitters

Published:2018 Issue:34 Volume:10 Page:15980-15988
ISSN:2040-3364
Container-title:Nanoscale
language:en
Short-container-title:Nanoscale

Author:

Zhao Chao¹²³⁴^ORCID,Ebaid Mohamed¹²³⁴,Zhang Huafan¹²³⁴,Priante Davide¹²³⁴,Janjua Bilal¹²³⁴^ORCID,Zhang Daliang¹⁵³⁴,Wei Nini¹⁵³⁴,Alhamoud Abdullah A.¹²³⁴,Shakfa Mohammad Khaled¹²³⁴^ORCID,Ng Tien Khee¹²³⁴^ORCID,Ooi Boon S.¹²³⁴

Affiliation:

1. King Abdullah University of Science and Technology (KAUST)

2. Photonics Laboratory

3. Thuwal 23955-6900

4. Saudi Arabia

5. Imaging and Characterization Core Lab

Abstract

Photoelectrochemical methods are implemented to quantify the hole concentration in AlGaN nanowires, calibrate doping conditions, and design ultraviolet light-emitting diodes.

Funder

King Abdulaziz City for Science and Technology

King Abdullah University of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

http://pubs.rsc.org/en/content/articlepdf/2018/NR/C8NR02615G

Reference76 articles.

1. Flexible a-IGZO Phototransistor for Instantaneous and Cumulative UV-Exposure Monitoring for Skin Health

2. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges