Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route-Reference-Cited by-同舟云学术

Synthesis, oxide formation, properties and thin film transistor properties of yttrium and aluminium oxide thin films employing a molecular-based precursor route

Published:2019 Issue:54 Volume:9 Page:31386-31397
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Koslowski Nico¹²³⁴⁵,Hoffmann Rudolf C.¹²³⁴⁵,Trouillet Vanessa⁶⁷⁸⁹⁵,Bruns Michael⁶⁷⁸⁹⁵,Foro Sabine¹⁰³⁴⁵,Schneider Jörg J.¹²³⁴⁵^ORCID

Affiliation:

1. Fachbereich Chemie

2. Eduard-Zintl-Institut für Anorganische und Physikalische Chemie

3. Technische Universität Darmstadt

4. 64287 Darmstadt

5. Germany

6. Institute for Applied Materials (IAM-ESS)

7. Karlsruhe Nano Micro Facility (KNMF)

8. Karlsruhe Institute of Technology (KIT)

9. 76344 Eggenstein-Leopoldshafen

10. Department of Material Science

Abstract

Transformation of a new molecular precursor allows the formation of yttrium oxide under moderate conditions displaying high voltage breakthrough behaviour.

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2019/RA/C9RA05348D

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