The role of solution-processed high-κ gate dielectrics in electrical performance of oxide thin-film transistors
Author:
Publisher
Royal Society of Chemistry (RSC)
Subject
Materials Chemistry,General Chemistry
Link
http://pubs.rsc.org/en/content/articlepdf/2014/TC/C4TC00334A
Reference37 articles.
1. Review of recent developments in amorphous oxide semiconductor thin-film transistor devices
2. Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
3. Low-temperature, solution-processed metal oxide thin film transistors
4. Role of Gallium Doping in Dramatically Lowering Amorphous-Oxide Processing Temperatures for Solution-Derived Indium Zinc Oxide Thin-Film Transistors
5. High dielectric constant gate oxides for metal oxide Si transistors
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