Effects of Hydrogen Plasma Treatment on the Electrical Behavior of Solution-Processed ZnO Thin Films

Author:

Park Ji-In1,Lee Hyun Uk1,Pearson Christopher2,Petty Michael C.2,Jeong Yesul3

Affiliation:

1. Research Center for Materials Analysis, Korea Basic Science Institute (KBSI), Daejeon 34133, Republic of Korea

2. School of Engineering and Computing Sciences and Centre for Molecular and Nanoscale Electronics, Durham University, South Road, Durham DH1 3LE, UK

3. Busan Center, Korea Basic Science Institute (KBSI), Busan 46742, Republic of Korea

Abstract

In this study, the effect of atmospheric hydrogen plasma treatment on the in-plane conductivity of solution-processed zinc oxide (ZnO) in various environments is reported. The hydrogen-plasma-treated and untreated ZnO films exhibited ohmic behavior with room-temperature in-plane conductivity in a vacuum. When the untreated ZnO film was exposed to a dry oxygen environment, the conductivity rapidly decreased, and an oscillating current was observed. In certain cases, the thin film reversibly ‘switched’ between the high- and low-conductivity states. In contrast, the conductivity of the hydrogen-plasma-treated ZnO film remained nearly constant under different ambient conditions. We infer that hydrogen acts as a shallow donor, increasing the carrier concentration and generating oxygen vacancies by eliminating the surface contamination layer. Hence, atmospheric hydrogen plasma treatment could play a crucial role in stabilizing the conductivity of ZnO films.

Funder

Korea Basic Science Institute

Publisher

MDPI AG

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