On the role of the metal oxide/reactive electrode interface during the forming procedure of valence change ReRAM devices-Reference-Cited by-同舟云学术

On the role of the metal oxide/reactive electrode interface during the forming procedure of valence change ReRAM devices

Author:

Kindsmüller Andreas¹²³⁴^ORCID,Meledin Alexander⁵²⁶⁴⁷^ORCID,Mayer Joachim⁵²⁶⁴⁷,Waser Rainer¹²³⁴⁸,Wouters Dirk J.¹²³⁴

Affiliation:

1. Institut für Werkstoffe der Elektrotechnik 2 & JARA-FIT

2. RWTH Aachen University

3. 52056 Aachen

4. Germany

5. Central Facility for Electron Microscopy & JARA-FIT

6. 52074 Aachen

7. Ernst Ruska-Centre for Microscopy and Spectroscopy with Electrons (ER-C)& JARA-FIT

8. Peter Gruenberg Institute & JARA-FIT

Abstract

This work investigates the oxygen exchange at the oxide/electrode interface in ReRAM devices and its influence on the forming behaviour.

Funder

Deutsche Forschungsgemeinschaft

Publisher

Royal Society of Chemistry (RSC)

Subject

General Materials Science

Link

Reference33 articles.

3. R. Waser , R.Bruchhaus and S.Menzel , Redox-Based Resistive Random Access Memories , Wiley , 2012

4. A. Padovani , L.Larcher , P.Padovani , C.Cagli and B.De Salvo , 2012 4th Ieee International Memory Workshop (imw) , 2012 , 4 pp

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