Microstructural modulation of organic passivation layers for metal oxide semiconductors to achieve high bias stability-Reference-Cited by-同舟云学术

Microstructural modulation of organic passivation layers for metal oxide semiconductors to achieve high bias stability

Published:2020 Issue:32 Volume:8 Page:11209-11222
ISSN:2050-7526
Container-title:Journal of Materials Chemistry C
language:en
Short-container-title:J. Mater. Chem. C

Author:

Ho Dongil¹²³⁴,Jeong Ha-Yun⁵⁶⁷⁸⁹,Le Minh Nhut¹⁰¹¹¹²⁴,Usta Hakan¹³¹⁴¹⁵¹⁶^ORCID,Kwon Hyuck-In⁵⁶⁷⁸⁹,Kim Myung-Gil¹⁰¹¹¹²⁴^ORCID,Kim Choongik¹²³⁴^ORCID

Affiliation:

1. Department of Chemical and Biomolecular Engineering

2. Sogang University, 1 Shinsoo-dong, Mapo-gu

3. Seoul 04107

4. Republic of Korea

5. School of Electrical and Electronics Engineering

6. Chung-Ang University

7. 84 Heukseok-ro

8. Dongjak-gu

9. Seoul 06974

10. School of Advanced Materials Science and Engineering

11. Sungkyunkwan University

12. Suwon 16419

13. Department of Materials Science and Nanotechnology Engineering

14. Abdullah Gul University

15. Kayseri 38080

16. Turkey

Abstract

This study investigates the microstructural control of organic back-channel passivation layers for bias stability enhancement and electrical property tuning of metal oxide thin-film transistors.

Funder

National Research Foundation of Korea

Publisher

Royal Society of Chemistry (RSC)

Subject

Materials Chemistry,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/TC/D0TC02393K

Reference112 articles.

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