Solution-processed resistive switching memory devices based on hybrid organic–inorganic materials and composites-Reference-Cited by-同舟云学术

Solution-processed resistive switching memory devices based on hybrid organic–inorganic materials and composites

Published:2018 Issue:37 Volume:20 Page:23837-23846
ISSN:1463-9076
Container-title:Physical Chemistry Chemical Physics
language:en
Short-container-title:Phys. Chem. Chem. Phys.

Author:

Shan Yingying¹²³⁴,Lyu Zhensheng¹²³⁴,Guan Xinwei¹²³⁴⁵,Younis Adnan¹²³⁴^ORCID,Yuan Guoliang¹⁶⁷⁸,Wang Junling¹⁹¹⁰,Li Sean¹²³⁴,Wu Tom¹²³⁴^ORCID

Affiliation:

1. School of Materials Science and Engineering

2. University of New South Wales (UNSW)

3. Sydney

4. Australia

5. Materials Science and Engineering

6. Nanjing University of Science and Technology

7. Nanjing

8. P. R. China

9. Nanyang Technological University

10. Singapore

Abstract

We review emerging low-cost solution-processed resistive random-access memory (ReRAM) made of either hybrid nanocomposites or hybrid organo-lead halide perovskites.

Publisher

Royal Society of Chemistry (RSC)

Subject

Physical and Theoretical Chemistry,General Physics and Astronomy

Link

http://pubs.rsc.org/en/content/articlepdf/2018/CP/C8CP03945C

Reference98 articles.

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