Growth mechanism on graphene-regulated high-quality epitaxy of flexible AlN film-Reference-Cited by-同舟云学术

Growth mechanism on graphene-regulated high-quality epitaxy of flexible AlN film

Published:2021 Issue:42 Volume:23 Page:7406-7411
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Jia Yanqing¹,Wu Haidi¹,Zhao Jianglin¹,Guo Haibin¹,Zeng Yu¹,Wang Boyu¹,Zhang Chi¹,Zhang Yachao¹,Ning Jing¹^ORCID,Zhang Jincheng¹,Zhang Tao¹,Wang Dong¹,Hao Yue¹

Affiliation:

1. The State Key Discipline Laboratory of Wide Band Gap Semiconductor Technology, Xi'an Shaanxi Joint Key Laboratory of Graphene, Xidian University, Xi'an 710071, China

Abstract

We report a novel diffusion–adsorption regulation growth method in the epitaxy of AlN on graphene for the high-quality and transferable large-size AlN film.

Funder

Natural Science Basic Research Program of Shaanxi Province

Fundamental Research Funds for the Central Universities

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2021/CE/D1CE00988E

Reference30 articles.

1. Van der Waals epitaxy—a new epitaxial growth method for a highly lattice-mismatched system

2. van der Waals epitaxy: 2D materials and topological insulators