Quasi‐2D Growth of Aluminum Nitride Film on Graphene for Boosting Deep Ultraviolet Light‐Emitting Diodes-Reference-Cited by-同舟云学术

Quasi‐2D Growth of Aluminum Nitride Film on Graphene for Boosting Deep Ultraviolet Light‐Emitting Diodes

Published:2020-06-23 Issue:15 Volume:7 Page:2001272
ISSN:2198-3844
Container-title:Advanced Science
language:en
Short-container-title:Adv. Sci.

Author:

Chang Hongliang¹²,Chen Zhaolong³⁴,Liu Bingyao⁴⁵,Yang Shenyuan²⁶,Liang Dongdong¹²,Dou Zhipeng⁴⁵,Zhang Yonghui⁷,Yan Jianchang¹²,Liu Zhiqiang¹²,Zhang Zihui⁷,Wang Junxi¹²,Li Jinmin¹²,Liu Zhongfan³⁴,Gao Peng⁵⁸,Wei Tongbo¹²^ORCID

Affiliation:

1. Research and Development Center for Semiconductor Lighting TechnologyInstitute of SemiconductorsChinese Academy of Sciences Beijing 100083 China

2. Center of Materials Science and Optoelectronics EngineeringUniversity of Chinese Academy of Sciences Beijing 100049 China

3. Center for Nanochemistry (CNC)Beijing Science and Engineering Center for NanocarbonsCollege of Chemistry and Molecular EngineeringPeking University Beijing 100871 China

4. Beijing Graphene Institute (BGI) Beijing 100095 China

5. Electron Microscopy Laboratoryand International Center for Quantum MaterialsSchool of PhysicsPeking University Beijing 100871 China

6. State Key Laboratory of Superlattices and MicrostructuresInstitute of SemiconductorsChinese Academy of Sciences Beijing 100083 China

7. School of Electronics and Information EngineeringHebei University of Technology Tianjin 300401 China

8. Collaborative Innovation Center of Quantum Matter Beijing 100871 China

Funder

National Natural Science Foundation of China

Natural Science Foundation of Beijing Municipality

Publisher

Wiley

Subject

General Physics and Astronomy,General Engineering,Biochemistry, Genetics and Molecular Biology (miscellaneous),General Materials Science,General Chemical Engineering,Medicine (miscellaneous)

Link

https://onlinelibrary.wiley.com/doi/pdf/10.1002/advs.202001272

Reference41 articles.

1. Ultraviolet light-emitting diodes based on group three nitrides

2. AlGaN photonics: recent advances in materials and ultraviolet devices

3. The emergence and prospects of deep-ultraviolet light-emitting diode technologies

4. 270 nm Pseudomorphic Ultraviolet Light-Emitting Diodes with Over 60 mW Continuous Wave Output Power

5. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres

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