Growth of single-crystalline nickel silicide nanowires with excellent physical properties-Reference-Cited by-同舟云学术

Growth of single-crystalline nickel silicide nanowires with excellent physical properties

Published:2015 Issue:9 Volume:17 Page:1911-1916
ISSN:1466-8033
Container-title:CrystEngComm
language:en
Short-container-title:CrystEngComm

Author:

Lin Jen-Yi¹²³,Hsu Hsiu-Ming¹²³,Lu Kuo-Chang¹²³⁴²

Affiliation:

1. Department of Materials Science and Engineering

2. National Cheng Kung University

3. Tainan City 701, Taiwan

4. Center for Micro/Nano Science and Technology

Abstract

Single-crystalline NiSi₂, Ni₂Si and Ni₃₁Si₁₂ nanowires with outstanding characteristics were synthesized through a nickel transport chemical vapor deposition method.

Funder

Ministry of Science and Technology

Publisher

Royal Society of Chemistry (RSC)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2015/CE/C4CE02513J

Reference24 articles.

1. Silicon-Nanowire Transistors with Intruded Nickel-Silicide Contacts

2. Single-crystal metallic nanowires and metal/semiconductor nanowire heterostructures

3. Low Resistivity Metal Silicide Nanowires with Extraordinarily High Aspect Ratio for Future Nanoelectronic Devices

4. A novel silicide and germanosilicide by NiCo alloy for Si and SiGe source/drain contact with improved thermal stability

5. Vertically well-aligned epitaxial Ni31Si12 nanowire arrays with excellent field emission properties

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